Abstract
Structural relaxation processes in amorphous silicon (a-Si) have been examined by molecular-dynamics (MD) simulations using the Tersoff interatomic potential. The a-Si networks generated by rapid quenching from liquid Si were annealed. Structural changes due to the relaxation of a-Si networks were observed. The present MD simulations reproduce well experimental measurements of changes in radial distribution functions, static structure factors, bond angle distributions, and phonon densities of states due to structural relaxation.
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