Atomistic simulations of morphology and spreading behavior of cluster beam deposition

Abstract

Cluster sizes of Co 10 (10 atoms of 1 cluster), Co 20, and Co 30 and Co atoms are deposited to compare the average kinetic energy and surface roughness on a Cu(0 0 1) substrate using molecular dynamics (MD). The incident atoms do not penetrate into the surface of the substrate for an incident energy of 1 eV and a deposition rate of 30 atoms/ps. However, Co 30 of the incident atoms penetrate into the surface of the substrate for an incident energy of 1 eV per atom and a deposition rate of 1 cluster/ps. Therefore, the intermixing and the sputtering is embedded in the surface layers of the substrate in the cluster beam deposition process due to high energy and mobility. The surface becomes smoother with increasing deposition rate and/or substrate temperature. For atomic-level stress, a transition from compressive to tensile stress occurs. The average stresses are −0.38 and −0.19 GPa when incident Co 10 and Co 30 are absorbed, respectively. Therefore, the atoms with tensile stress at the surface layers, and the atoms with compressive stress are mainly distributed at the bottom layers.