Atomistic simulation of the torsional buckling of single-crystalline GaN nanotubes

Abstract

The responses of single-crystalline gallium nitride (GaN) nanotubes under torsion have been investigated using an atomistic simulation based on a Stillinger–Weber potential. The simulation results show that the buckling behavior of GaN nanotubes is strongly dependent on the simulation temperature, strain rate, tube length and the wall thickness of the nanotubes. The critical torsional angle decreases with the increase of simulation temperature, strain rate and thickness of the nanotube, and increases with the increase in the tube length.