Abstract
Dependence of stress values in silicon dioxide films on its thickness in the initial stage of film growth was investigated using atomistic molecular dynamics simulation. It was shown that the stress in normally deposited films was compressive and varied slightly with growth of film thickness. The stress in the glancing angle deposited films was several times lower than the stress in the normally deposited films, and varied from compressive stress to tensile stress with increasing film thickness. An essential anisotropy of stress tensor components was revealed for the case of glancing angle deposition. The calculated stress values were in the interval of experimental data.
Highlights
Mechanical stresses that arise in growing films, due to differences in the substrate and film properties, significantly affect the optical coating quality
These stresses result in the deformation of the substrate, which may be a problem in coating applications [1]
The stress tensor components were calculated through the pressure tensor
Summary
Mechanical stresses that arise in growing films, due to differences in the substrate and film properties, significantly affect the optical coating quality. These stresses result in the deformation of the substrate, which may be a problem in coating applications [1]. The value of the stresses essentially depend on the film’s material and deposition conditions [1,2]. An experimental investigation of the stress dependence on deposition conditions at the initial stage of film growth is still a challenge. The application of the atomistic simulation to the investigation of the stresses in the deposited films seems promising
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