Abstract
Capture and emission of carriers by point defects in gate dielectrics, such as SiO2 and HfO2, and at their interfaces with the substrate are thought to be responsible for performance and reliability issues in MOS devices, particularly dielectric degradation and the bias temperature instability (BTI). Ultra-thin silicon dioxide films are present at the interface between Si and high-κ oxides; thus it is hoped that understanding the defects in silica which contribute to BTI will also aid the reliability of devices containing high-κ oxides. This chapter reviews the state of the art of modeling oxygen deficiency defects implicated in both electron and hole trapping in amorphous silica (a-SiO2).
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