Atomistic mechanism effects on the growth of GaAsBi and GaAs nanowires

Abstract

Kinetic Monte Carlo (KMC) simulations were developed to describe all the kinetic processes occurring during epitaxial growth on vicinal surfaces and to interpret the formation of one-dimensional structures on vicinal surface. Moreover, we know that whatever the considered mechanism, it allows the attachment of deposited atoms in the step edge of the substrate surface. Among these mechanisms that can be studied as adjustable parameters by KMC, are the Ehrlich-Schwoebel (ES) barrier, and inverse (iES), have been considered in this work and shown to play a key role in the formation of perfect nanowires (NWs) on substrate surface. We also assessed the effect of the terrace width of substrate surface on the quality of NWs. The results show that the GaAsBi NWs have a better quality than the GaAs NWs. This work provides experimentalists with optimum growth parameters and atomistic mechanisms governing the creation of a uniform distribution of wires on vicinal surfaces.