Atomistic insights into chemical vapor deposition process of preparing silicon carbide materials using ReaxFF-MD simulation

Abstract

SiC is a kind of key advanced coating material used widely. The in-depth understanding of the CVD process of preparing SiC materials at the atomic scale is beneficial for studying the CVD mechanism and then optimizing the materials. Here, a CVD model of preparing SiC materials is established based on ReaxFF-MD considering the whole pyrolysis-adsorption-desorption-growth mechanism. The accuracy of the ReaxFF potential and its parameters is verified by DFT at first. Then an energy-based Monte Carlo (EMC)-MD-CVD model is proposed based on the bonding formation energy originating from DFT. It is used to simulate the CVD process of preparing SiC materials. The CVD of MTS is studied by deposition efficiency and deposited film components at different temperatures, and it can be found it in good agreement with experimental results. Finally, the crystallization of SiC film prepared by the CVD of MTS is studied by energy evolution and atomic structure evolution. The results are helpful to understand the CVD mechanism for preparing coatings and it can be used to optimize the CVD parameters of preparing SiC materials in the future.