Abstract
Device-to-device variations in contact resistance currently hinder large-scale production of graphene-based electronics, making metal-graphene edge contacts an important research topic. The authors use density functional theory plus an advanced transport formalism to investigate the physical mechanisms behind the observed resistance variations. Contact quality depends intricately on the particular combination of metal and contaminant atoms present at the edge of the graphene flake. These results should help to refine fabrication processes for tomorrow's electronic components.
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