Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures

Abstract

Atomic-scale understanding and controllability of heterointerfaces in MBE-grown quantum wells and other microstructures are reviewed mainly on the basis of our systematic study using the mobility, photoluminescence, RHEED, and electron microscopic measurement. We discuss possible origins of apparent discrepancies among different interface models and emphasize the importance of defining precisely both the compositional profile and the growth condition as well as applying STM and related methods to establish the unified view of heterointerfaces. Possible influences of interface roughness and process-induced contaminations on electronic properties of quantum wires are also discussed