Abstract
It is known that only in-plane piezoelectricity exists in pristine two dimensional (2D) transition metal dichalcogenides (TMDs). In this study, we demonstrate the creation of strong out-of-plane piezoelectricity in semiconducting 2H-MoTe2 flakes by an artificial atomic-scale symmetry breaking. The atomic-scale symmetry breaking associated with flexoelectricity was realized through Te vacancy formation by a simple thermal annealing of the 2D TMDs. The strong out-of-plane piezoelectricity was experimentally measured and confirmed by theoretical calculations. This strategy of atomic-scale symmetry modulation for out-of-plane piezoelectricity can be easily applied to a broader class of 2D TMD materials that have not been used for applications with out-of-plane piezoelectricity. Accordingly, it can stimulate the expansion of practical energy device applications with 2D TMD materials.
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