Abstract
Mixed chalcopyrite semiconductors like Cu(In,Ga)S2 and Cu(In,Ga)Se2 are characterized by the coexistence of different local atomic arrangements around the S or Se anion. The resulting anion displacement strongly influences the material bandgap. We studied the atomic-scale structure of Cu(In,Ga)S2 as a function of composition using x-ray absorption spectroscopy and valence force field simulations. Applying a specially developed model for not fully random cation distributions, we find that structural relaxation of the anion with respect to In and Ga contributes significantly more to the bandgap bowing observed for Cu(In,Ga)S2 and Cu(In,Ga)Se2 than relaxation with respect to Cu and group-III atoms.
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