Atomic-scale manufacture of metre-sized two-dimensional single crystals by interfacial modulation

Abstract

With the shrinkage of the chip feature size, the short-channel effect becomes more and more predominate. The development of new quantum materials for high-performance devices has become imperative for the current technological development. Two-dimensional (2D) materials, due to their excellent physical and chemical properties, are thought to be the promising candidate of quantum materials for achieving the high-end electronic and optoelectronic devices. Like the development of silicon-based chips, the wafer-scale device applications of 2D materials must be based on the fabrication of high-quality, large-size 2D single crystals. However, the existing manufacturing techniques of the well-studied bulk single crystals cannot be fully applied to the fabrication of 2D single crystals due to the interfacial characteristics of 2D materials. So far, single crystals of metre-sized graphene, decimetre-sized hBN and wafer-sized TMDCs have been successfully prepared by chemical vapor deposition, but the sizes of other 2D single crystals are still very limited and not in the same league as conventional semiconductor materials. Therefore, it is urgent to develop an effective preparation strategy for the manufacture of various 2D single crystals. In this review, we mainly overview the fabrication techniques for the meter-scale growth of 2D single crystals, and propose three key modulation aspects in the atomic-scale manufacture, i.e. the growth modulation of 2D single nucleus, the preparation of single-crystal substrates, and the alignment control of 2D single-crystal domains, in order to provide a universal method of fabricating the large-size 2D single crystals. Finally, the prospect of chip devices based on these high-quality large-size novel 2D single crystals is discussed, thereby paving the way for the future industrial applications of electronics and optoelectronics.