Abstract
As an important third-generation semiconductor material, the micro-deformation and removal mechanism of 6H-SiC at the atomic scale are vital for obtaining ultra-smooth and damage-free surface with atomic steps. Due to the difficulties in directly observing the surface/subsurface of nanomachining region by current experimental means, molecular dynamics method is used to study the atomic-scale details in nanomachining process, such as dislocation slip motion, phase transition, and material separation mechanism. The influence of crystallography-induced anisotropy on the slip deformation and nanometric machinability of 6H-SiC is emphatically investigated. This study contributes significantly to the understanding of micro-deformation and nanomachining process of 6H-SiC.
Highlights
IntroductionThe most widely used crystals of SiC are 3C, 4H, and 6H
As the third generation semiconductor material with wide bandgap, SiC has the characteristics of high breakdown field, high radiation tolerance, high velocity of carrier saturation, fast thermal conductivity, small dielectric constant, and steady chemical properties, so it has wide applications in the fields of high temperature, high frequency, high power, antiradiation, and short-wavelength optoelectronic devices and optoelectronic integration [1].The most widely used crystals of SiC are 3C, 4H, and 6H
The implementations of workpiece and tool modeling were dependent on large-scale atomic/molecular massively parallel simulator (LAMMPS) without the aid of other software
Summary
The most widely used crystals of SiC are 3C, 4H, and 6H. Processing methods such as grinding/lapping/polishing are still the main methods during the machining of single-crystal SiC. The hardness ratio between diamond and SiC is close to 2:1 (the processing depth < 50 nm)), which is much lower than the recommended value of 5:1 for the machining process [2]. Severe wear of cutting tool and subsurface damage directly influence the quality of wafer. To address these issues, a large amount of work has been done to understand the removal behavior of SiC at the nanoscale. The removal mechanism of 3C-SiC and influencing of the processing factors have been thoroughly studied, such as the plastic deformation
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