Atomic-precision architectures for the high-fidelity spin read-out of phosphorus donors in silicon

Abstract

We report on recent progress on complex device architectures [1, 2] for the detection of individual and exchange coupled electron spins bound by phosphorus donors in silicon. Patterned by scanning tunneling microscopy (STM) hydrogen lithography, these architectures are constructed from fundamental building blocks such as atomic-scale wires [3, 4] and quantum dots [5, 6], and are shown to allow for high-fidelity detection of single electronic charges and spins confined to atomic length scales [1, 2].