Atomic-level strain-relieving mechanism and local electronic structure of a wetting film

Abstract

The strain-relieving mechanism and local electronic density of states of a wetting film, was studied in the Ag∕W system using scanning tunneling microscopy and spectroscopy. In the Ag wetting film, a periodic bright ridge structure was observed along the two equivalent directions, relieving mixed compressive-tensile strain. Two unoccupied electronic states were observed between the ridges, while the other two occupied electronic states were observed at the ridges. The Ag atoms occupying the bridge sites contribute to relieve the elastic strain and to induce the occupied electronic states.