Abstract
We present independently confirmed efficiencies above 20% for PERC-type solar cells with the point-contacted rear being either passivated by atomic-layer-deposited Al 2 O 3 or by stacks consisting of an ultrathin Al 2 O 3 film and a thicker PECVD-SiO x layer. Internal quantum efficiency measurements reveal that the effective rear surface recombination velocities of the single-layer Al 2 O 3 -passivated cells are comparable to those measured on reference cells passivated by an aluminum-annealed thermal SiO 2 , while those of the Al 2 O 3 /SiOx-passivated cells are even lower. Very low effective rear surface recombination velocities of only 70 cm/s are reported for the Al 2 O 3 /SiO x stacks, including metalized areas on the cell rear.
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