Abstract
We report the first direct observation of dissociative chemisorption of O2 molecules on a Si surface. We link this to our other new observation that smooth oxide layers can be grown easily on Si(113). The initial oxidation is discussed in terms of surface diffusion paths and surface stress. Ab initio calculations help elucidate the favored adsorption sites and the oxidation mechanism.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
