Abstract
AbstractThe ability to organize materials in two or three dimensional structures forms the basis for approach worldwide to construct nanometer sized arrangements. Here we show the interaction of 200 MeV silver ions with a Si( 100) single crystal lattice which has been studied to look for defects with atomic resolution. Employing scanning tunnelling microscopy (STM), we demonstrate that the deposited energy is not stored as random defected arrangements at the irradiation site but as spatially extended structures at predetermined locations. These artificially reordered structures consist of random Si atoms, placed atomically sharp next to the single crystalline lattice.
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