Abstract
Atomic resolution imaging of the cleaved InP(110) surface was demonstrated using an ultrahigh vacuum atomic force microscope (UHV-AFM) in a noncontact mode, for the first time. The force gradient acting on the tip was detected by the frequency modulation (FM) detection method. A rectangular lattice could be clearly resolved. Atomic defects were also clearly and reproducibly observed. These results suggest that the noncontact UHV-AFM has potential for imaging III-V compound semiconductor surfaces with true atomic-scale lateral resolution.
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