Abstract
The first demonstration of atomic-resolution imaging of a GaAs(110) surface with an ultrahigh vacuum atomic force microscope (UHV AFM) is performed. A rectangular lattice with spacing of 5.7±0.5 Å×4.0±0.4 Å is resolved. This result suggests that the UHV AFM has potential capability for investigating semiconductor surfaces having dangling bonds on an atomic scale.
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