Abstract
Monolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano‐ and opto‐electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integration with other two‐dimensional materials, and hence, novel routes of synthesis beyond exfoliation. Here, a disruptive approach is demonstrated, namely, imprinting the lateral pattern of an atomically stepped one‐dimensional template into a hBN monolayer. Specifically, hBN is epitaxially grown on vicinal Rhodium (Rh) surfaces using a Rh curved crystal for a systematic exploration, which produces a periodically textured, nanostriped hBN carpet that coats Rh(111)‐oriented terraces and lattice‐matched Rh(337) facets with tunable width. The electronic structure reveals a nanoscale periodic modulation of the hBN atomic potential that leads to an effective lateral semiconductor multi‐stripe. The potential of such atomically thin hBN heterostructure for future applications is discussed.
Highlights
Hexagonal boron nitride is an attractive two-dimensional (2D) material for high performance electronics and photonics applications
We have explored a novel approach to nanopatterning a material with practical technological impact, namely growing Hexagonal boron nitride (hBN) monolayers on vicinal surfaces
The hBN film forms a continuous layer over the faceted system with alternated (111) and (337) phases, each exhibiting a characteristic internal texturing, and strain-free atomic bonding at the mutual interface, thereby defining an electronicallycoherent hBN lateral heterostructure
Summary
Hexagonal boron nitride (hBN) is an attractive two-dimensional (2D) material for high performance electronics and photonics applications. Perpendicular to the steps, the main dispersing feature is broken up in segments, separated by ≈0.3 meV mini-gaps (see arrows; the second derivative of the image enhances gap visualization, see Supporting Information), whereas in the parallel direction the π band splits in a set of continuous sub-bands (inclined arrows) The hill-and-valley geometry of the surface plane leads to separate intensity from (111)- and (337)-oriented facets in ARPES scans (see Figure S6, Supporting Information for details) This allows us to track the evolution of the π band emission from each phase, and to prove (111)/(337) electronic coupling.
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