Abstract
Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thinSiO 2/Si(001)interface roughness. Atomically flatSiO 2/Si(001)interfaces were realized by preparing theSi(001)−2 × 1surface in UHV followed by thermal oxidation. This planarization is significant in the range of oxide thickness ( T ox < ∼ 9nm). As for the ‘wet-cleaned’ surfaces, a wide variety of the interface roughness was observed at T ox < ∼ 4nmwhich corresponds to the ‘initial oxide thickness ( T io)’ which appeared in the oxide growth kinetics. The electron scattering caused by the interface roughness might degrade the inversion electron mobility for the ‘wet-cleaned’ sample at T ox < T io.
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