Abstract
Atomically flat superconducting NbN thin films have been grown on the SrTiO3 (111) substrate by plasma-assisted molecular beam epitaxy for the first time. Using scanning tunneling microscopy and in situ reflection high energy electron diffraction, we investigate the surface structure of epitaxial NbN thin films on the SrTiO3 (111) substrate. The orientation [101¯]NbN//[112¯]STO is dominating at substrate temperature above 700 °C. The quality of the as-grown films can be further improved by annealing at elevated temperatures. The homogeneous spatial distribution of superconducting gaps and magnetic vortices further demonstrates the high quality of the NbN films.
Highlights
NbN is a promising material with high superconducting transition temperature, mechanical strength, and chemical stability, which makes it widely used in superconducting devices such as single photon detecter,[1] hot electron bolometer,[2] and Josephson junction.[3]
High quality group-III nitride (AlN, GaN, InN) films have been successfully prepared by plasma-assisted molecular beam epitaxy (PAMBE), in which molecular nitrogen is activated by a microwave plasma source
We report atomically flat NbN films grown by PAMBE
Summary
NbN is a promising material with high superconducting transition temperature, mechanical strength, and chemical stability, which makes it widely used in superconducting devices such as single photon detecter,[1] hot electron bolometer,[2] and Josephson junction.[3]. Flat superconducting NbN thin films grown on SrTiO3 (111) by plasma-assisted MBE
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