Abstract
In this paper, state-of-the-art laser thermal annealing is used to form germanide contacts on n-doped Ge and is systematically compared with results generated by conventional rapid thermal annealing. Surface topography, interface quality, crystal structure, and material stoichiometry are explored for both annealing techniques. For electrical characterization, specific contact resistivity and thermal stability are extracted. It is shown that laser thermal annealing can produce a uniform contact with a remarkably smooth substrate interface with specific contact resistivity two to three orders of magnitude lower than the equivalent rapid thermal annealing case. It is shown that a specific contact resistivity of 2.84 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> Ω·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is achieved for optimized laser thermal anneal energy density conditions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
