Abstract
AbstractMixed‐halide perovskites show promising applications in tandem solar cells owing to their adjustable bandgap. One major obstacle to their commercialization is halide phase segregation, which results in large open‐circuit voltage deficiency and J‐V hysteresis. However, the ambiguous interplay between structural origin and phase segregation often results in aimless and unspecific optimization strategies for the device's performance and stability. An atomic scale is directly figured out the abundant Ruddlesden‐Popper anti‐phase boundaries (RP‐APBs) within a CsPbIBr2 polycrystalline film and revealed that phase segregation predominantly occurs at RP‐APB‐enriched interfaces due to the defect‐mediated lattice strain. By compensating their structural lead halide, such RP‐APBs are eliminated, and the decreasing of strain can be observed, resulting in the suppression of halide phase segregation. The present work provides the deciphering to precisely regulate the perovskite atomic structure for achieving photo‐stable mixed halide wide‐bandgap perovskites of high‐efficiency tandem solar cell commercial applications.
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