Abstract
Ru and RuO 2 thin films for advanced metal gate applications were deposited on 200 mm SiO 2/Si substrate by the novel deposition technique atomic vapor deposition (AVD™). AVD™ was carried out in an Aixtron Tricent™ system using liquid delivery of the Ru precursor. The creation of Ru- and RuO 2-films is controlled by varying the O 2 flow and deposition temperature. Ru layers with a near bulk resistivity of 10 μΩ cm and a uniformity of ∼2% for 20 nm film thickness were obtained at 450 °C deposition temperature. The smooth Ru layers have a thickness uniformity of about 2% and a roughness <1 nm. XRD measurements exhibit multi-crystalline Ru-films with a preferable orientation along the (0 0 2) plane. Adding O 2-flow RuO 2 layers were grown at 380 °C. RuO 2-films with a resistivity of about 80 μΩ cm and <2% uniformity were achieved for 30 nm thick films. The roughness of the RuO 2 layers is about 2 nm for 10–20 nm thickness. No Ru-crystallites could be detected in the RuO 2 layers by XRD. The thermal stability of the grown Ru and RuO 2 films was investigated by rapid thermal annealing in O 2 and N 2 atmosphere. Ru films were found to be stable in N 2 up to 900 °C and up to 500 °C in O 2. RuO 2-layers have been shown to be stable in O 2 up to at least 600 °C.
Published Version
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