Atomic transport in ceramics induced by electronic energy deposition (invited)

Abstract

In the present paper an overview over the results of a systematic study on swift heavy ion beam mixing of ceramic thin layer packages will be presented. It will be shown that interface mixing due to electronic energy deposition in these systems is a threshold process and can be regarded as transient interdiffusion in the molten ion track. The mixing threshold is given by the track formation threshold in the less sensitive of the interface forming materials with respect to beam induced damage. The mixing rate shows a square scaling with the electronic stopping power, in agreement with the global thermal spike model. The mixing efficiencies (except for NiO samples) do not vary much for different materials, and no influence of the solid state properties on the mixing effect can deduced. NiO seems to take an exceptional position within the investigated materials since it shows an extraordinary high mixing effect, which furthermore exhibits a spatial anisotropy. The latter is not yet fully understood.