Abstract
We present detailed results of ab initio pseudopotential calculations for equilibrium atomic geometry and chemical bonding on the arsenic-terminated GaAs(001)-β2(2 × 4) surface. We find that this surface is characterized by the presence of two distinct Ga-As bond lengths between the first and second surface layers. This feature is due to the presence of both threefold- and fourfold-coordinated Ga atoms in the second layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
