Abstract
The atomic structure of grain boundaries in germanium and silicon has been recently studied using high energy electron-diffraction, high resolution imaging and the α-fringe method on tilt 〈011〉 GBs. The results are examined in view of the data already obtained on clean semiconductor surfaces. It is shown that GBs tend to favour commensurate structures. Complete reconstruction occurs, sometimes forming a superstructure, and restoring the tetracoordination. New structural units typical of each GB geometry are then formed. The importance of defects in this periodic arrangement is emphasized particularly to explain their electrical activity.
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