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Abstract
A simple atomic structure model was proposed for Ga1−xInxAs solid solution. Distortion energy caused by the differences in Ga-As and In-As bond lengths was calculated using the valence-force-field approach. Calculated bond lengths for Ga1−xInxAs agree well with the extended x-ray absorption fine structure data. The calculated mixing enthalpy which corresponds to the excess energy caused by distortions agree with that from phase diagram.
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