Abstract
This paper summarizes current understanding of structural and electronic properties of nickel and copper silicide precipitates in silicon. From high-resolution electron microscopy studies it has been concluded that metastable structures form during early stages of precipitation which transform into energetically more favourable configurations during additional annealing or slow cooling. These structural transformations are related to changes of the electronic structure of the precipitates as revealed by deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). Deep bandlike states at initially formed NiSi 2- and Cu 3Si-platelets detected by DLTS have been attributed to a bounding dislocation and precipitate/matrix interfaces, respectively. Large NiSi 2-precipitates act as internal Schottky barriers and may control the minority carrier lifetime of silicon samples. Recent advances in modeling EBIC contrasts provide insight how metal impurities affect the electrical behaviour of dislocations at different degrees of decoration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
