Abstract
The migration of atomic steps during sublimation was observed in situ in real-time on Si{100}-(2×1) surfaces by low-energy electron microscopy at 7 eV. Migrating steps were often pinned. Migration of steps past pinning centers created sublimation hillocks. Complex atomic step and terrace structures formed near the hillocks, with some terraces exceeding 6000 nm in diameter. Lochkeime (hole-nuclei) formed in the larger terraces. Above 1350 K the Lochkeim density destroyed the orderly atomic step and terrace structure which, however, reformed upon cooling.
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