Atomic simulation of textured silicon carbide surface ultra-precision polishing

Abstract

In view of increasing accuracy requirements and difficult machining characteristics of silicon carbide materials, this paper proposes new machining method with ultra-high precision. Based on improvement of ultra-precision machining quality by textured surface, specific nano texture was machined on silicon carbide surface. Effects of different texture parameters on polishing force, polishing temperature, potential energy, dislocation, stress and friction coefficient were analyzed. Two typical textures (grooves and pits) with different sizes were compared. Simulation results show that surface morphology, polishing force and friction coefficient are improved with the increase in groove depth and pit depth. The smaller the groove spacing, the better the polishing quality and polishing behavior. In addition, groove texture can effectively inhibit the growth of dislocations and defect atoms during polishing. Compared with non-textured surface, textured silicon carbide surface can improve polishing conditions. It is found that groove texture has more beneficial effect on polishing quality than pit texture with the same size.