Abstract
In this paper, we used the Empirical Tight-Binding Method to model (AlxGa1-xAs)m/(GaAs)n superlattice structure (SLS) grown on GaAs substrate. To increase the accuracy of our modeling method, we also considered the atomic segregation by Kinetic Model, and analyzed the behavior of energy gap variation. As the Al composition increases, the energy gap of the SLS has an upward trend and ranges from 1.42 to 1.8eV. Meanwhile, for Al composition more than x = 0.45, a bump appears in the energy bandgap diagram verses m and n that determines where the bandgap changes from indirect to direct. When we consider the segregation in the energy gap calculation, we observe that the segregation causes the bump to shift 2 ML backward and reduces the bandgap energy. Furthermore, we realized that the segregation could cause a redshift phenomenon and increase the Auger recombination rate in the SLS.
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