Abstract
Determination of the polarity of insulating semipolar AlN layers was achieved via atomic scattering spectroscopy. The back scattering of neutralized He atoms on AlN surfaces revealed the atomic alignment of the topmost layers of semipolar AlN and the ZnO substrate. Pole figures of the scattering intensity were used to readily determine the polarity of these wurtzite-type semipolar materials. In addition, we found that +R-plane AlN epitaxially grows on −R-plane ZnO, indicating that the polarity flips at the semipolar AlN/ZnO interface. This polarity flipping is possibly explained by the appearance of −c and m-faces on the −R ZnO surfaces, which was also revealed by atomic scattering spectroscopy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
