Abstract
Boron (BF 2, 20 keV, 3.14/cm 2) and carbon (13 keV, 10 15/cm 2) implanted silicon annealed at 800 °C during 30 min or at 1000 °C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron–silicon clusters containing ~ 1.3 at.% of boron atoms have been observed in boron implanted silicon with a concentration exceeding the solubility limit. Often identified as BICs, they are interpreted as a metastable phase. Furthermore, addition of carbon clearly reduced the clustering of boron. This was interpreted as a diminution of boron diffusion or as an increase of the solubility limit of boron. Carbon–silicon clusters containing ~ 1.5 at.% of carbon atoms were observed, maybe the precursors of the SiC phase.
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