Abstract
The surface morphology of 8nm GaNAs layers grown by molecular-beam epitaxy on GaAs(001) substrates has been studied as a function of nitrogen content and growth temperature using scanning tunneling microscopy (STM). Increasing the nitrogen content from 0%–3% leads to a pronounced increase in surface roughness, caused by the appearance of deep pits. Raising the growth temperature from 400–500°C produces the same effect. We propose that pit formation is symptomatic of phase segregation. STM images show that the GaNAs layers adopt an (n×3) surface reconstruction, suggesting that a disproportionately high concentration of N is present on the postgrowth surface compared with that incorporated into the layer during growth.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
