Abstract
Thermal sublimation, a specific method to fabricate semiconductor nanowires, is an effective way to understand growth behavior as well. Utilizing a high‐resolution transmission electron microscope (TEM) with in situ heating capability, the lattice‐asymmetry‐driven anisotropic sublimation behavior is demonstrated of wurtzite GaN: sublimation preferentially occurs along the [0001¯] and [0001] directions in both GaN thin films and nanowires. Hexagonal pyramidal nanostructures consisting of six semipolar {11¯01} planes and one (0001¯) plane with the apex pointing to the [0001] direction are generated as a sublimation‐induced equilibrium crystal structure, which is consistent with the lattice‐asymmetry‐driven growth behaviors in wurtzite GaN. These findings offer a new insight into the thermal stability of wurtzite GaN and provide essential background for tailoring the structure of III‐nitrides for atomic‐scale manufacturing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Advanced science (Weinheim, Baden-Wurttemberg, Germany)
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.