Abstract
Electromigration (EM) has aroused substantial attention with the shrinkage of modern devices. EM is an interaction between electron carriers and atoms, meaning that it arises from atomic behaviour. Both the number of twin boundaries (TBs) and the direction of electron flow are crucial factors affecting EM behaviour. In this study, EM phenomena with perpendicular and parallel electron flow were investigated by high resolution transmission electron microscopy (HRTEM). Twin planes could limit the growth direction of voids in the parallel case. The evolution of smooth surfaces into step-like surfaces resulting from the triple point retarding EM has been demonstrated. With the measurement of the resistance, it could be concluded that the specimen with electron flow perpendicular to the TBs had better EM restriction. Columnar grains can confine the position of the voids. This study demonstrates the dynamic evolution of the surface structure, providing insight into the fabrication of interconnections in the integrated circuits industry.
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