Abstract
Metal-oxide thin films and interfaces exhibit numerous fascinating electronic transport properties that are not found in conventional semiconductor materials. There has been much interest in engineering them to improve their functionalities, and an improved fundamental understanding of the phenomena that occur in oxide films and heterostructures is critical. In this review, an innovative approach to strontium titanate and zinc oxide-based heterostructures using state-of-the-art scanning tunneling microscopy and photoemission spectroscopy systems, as well as electrical measurements are presented. The results show that atomic-scale bottom-up processes with greater care provide excellent opportunities for improving material properties and classifying complicated conductivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
