Atomic scale defects in MOS reliability problems

Abstract

A fundamental atomic scale understanding of the physical mechanisms involved in solid state device reliability problems has long been an important goal among reliability researchers. This is so because such an understanding can lead to an amelioration of the problems or at least help in the development of reliable predictive models. Several magnetic resonance techniques have both the sensitivity and the analytical power to detect and identify the atomic scale defects in important MOS reliability problems such as the negative bias temperature instability (NBTI) as well as hot carrier effects and radiation damage. Resonance techniques can also identify defects in high-k MOS systems and, more broadly, in time dependent dielectric breakdown (TDDB). Quite recent advances in electrically detected magnetic resonance (EDMR) allow resonance measurements to be combined with standard purely electrical characterization techniques such as charge pumping. The results of magnetic resonance studies of these reliability problems has lead to the identification of some, perhaps nearly all, of the atomic scale defects involved. In this presentation I will discuss atomic scale defects involved in several MOS reliability problems including NBTI, radiationdamage, and instabilities in high-k devices and some discussion of TDDB defects. I will also discuss the physical mechanisms involved in the population and creation of the defects as well as physically based reliability models. Since most of the presentation will deal with magnetic resonance results, I will also include a brief tutorial introduction to several magnetic resonance techniques with special emphasis placed on new zero field and low field EDMR.