Abstract
Contrast of energy-filtered electron microscope images with atomic resolution of Si atoms producing SiL 3-ionization electrons in a Si crystal is discussed. The localization width of the inelastic scattering potential is deduced from the inelastic scattering factor for SiL 3-ionization, which is based on a program for a modified hydrogenic L-shell cross section. The image contrast at the bottom surfaces of the Si crystals containing a single inelastic scattering layer at the top, middle and bottom layers showed diffuse, sharp and very sharp image contrast, i.e. top-bottom effect is predominant. Similar images of an atom which scattered electrons inelastically with a very small energy loss in an aluminum crystal were calculated and it is noted that the atomic structure of aluminum is observed.
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