Atomic precision fabrication of quantum devices down to the single atom regime

Abstract

NIST is using atomically precise fabrication to develop electronic devices for use in quantum information processing and novel quantum materials. We are using hydrogen-based scanning probe lithography to enable deterministic placement of individual dopant atoms with atomically aligned contacts and gates to fabricate single atom transistors, devices for single electron spin manipulation, and arrayed devices for analog quantum simulation research. Atomic precision devices, where individual atoms or electrons fundamentally affect device performance, bring about a variety of new manufacturing and metrology challenges. Single atom defects and charge instability deeply change device performance, affecting reliable manipulation and sensing of individual electrons. Conventional metrology methods such as transmission electron and scanning electron microscopy often prove inadequate at this length scale and new, challenging electrical test methods are needed.