Atomic order, magnetic and transport phenomena in half-Heusler CoMnSb0.9Z0.1 alloys (Z = Si, Al, Sn, and Bi)

Abstract

In this study, we investigate the effects of doping with ∼10 at% of Si, Al, Sn, and Bi on the atomic order, microstructure, and magnetic properties of CoMnSb samples prepared using the arc-melting method. X-ray diffraction, scanning electron microscopy, and magnetometry techniques were employed to derive the structural and magnetic parameters. The samples demonstrate a superstructure with an Fm-3m space group. They exhibit a saturation moment of 3.71–4.71 μB per formula unit at 5 K and a Curie temperature ranging from 474 to 507 K. Rietveld refinement performed on the XRD data revealed a possible occupation of magnetic atoms in the vacant 32f (x’, x’, x’) sites and atomic swapping, both of which may affect the magnitudes of the magnetic moment and Curie temperature. The electrical measurement results show that the grain boundaries and voids govern the conductivity of the samples. The spin polarization of the Si-doped sample was determined based on the grain-boundary magnetoresistance effect, which showed that this sample has a high degree of atomic order, consistent with the low magnetic moment, Curie temperature, and lattice constant.