Abstract
AbstractHigh‐resolution AES depth profiling of a GaAs/AlAs superlattice structure with 8.8/9.9 nm single‐layer thickness by sputtering with 1.0 keV and 0.6 keV Ar+ ions at an incidence angle of 80° resulted in optimum depth resolution values for 0.6 keV Ar+ ions of Δz = 2.0 nm for the low‐energy Al (68 eV) intensity profile and of Δz = 2.0 nm for the high‐energy Al (1396 eV) intensity profile. A simple model description of the influence of atomic mixing (w), surface roughness (σ) and Auger electron escape depth (λ) was applied to calculate the measured profiles. An excellent fit is obtained by a reasonable set of these parameters: for 0.6 keV Ar+ ion sputtering, w = 1.0 nm, σ = 0.6 nm, λ (Al 68 eV) = 0.4 nm and λ (Al 1396 eV) = 1.7 nm.
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