Abstract

Using molecular dynamics, the effect of an atomic mass difference on a localized phonon mode in SiGe alloys was investigated. Phonon dispersion relations revealed that a change in atomic mass causes the optical and acoustic modes to shift frequency. The results indicate that the local mode is sensitive to both Si and Ge atomic mass changes; reducing the Si atomic mass shifts the local mode to higher frequencies, and increasing the Ge atomic mass shifts the local mode to lower frequencies. Furthermore, the results suggest that the local mode originates from the Si–Ge bond vibration. Although the Si–Si, Si–Ge, and Ge–Ge optical mode frequencies are well approximated by the two-body harmonic oscillator model, a much heavier effective mass than that of the Si–Ge pair must be assumed to reproduce the local mode frequency. A plausible interpretation of the local mode is a collective vibration of Ge clusters embedded within the Si lattice.

Highlights

  • The increasing global demand for renewable sources of energy has been the driving force for thermoelectric (TE) research over the past few decades.[1,2,3,4,5,6,7] The ideal thermoelectric will maintain efficient interconversion between heat energy and electricity, providing a means for harnessing waste heat

  • This study revealed that a SiGe alloy, which consists of Si–Si, Si–Ge, and Ge–Ge bonds, will always produce this mode

  • The phonon dispersion relations are accompanied by a color bar on the side to gauge the magnitude of the spectral energy density (SED) of each phonon mode

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Summary

Introduction

The increasing global demand for renewable sources of energy has been the driving force for thermoelectric (TE) research over the past few decades.[1,2,3,4,5,6,7] The ideal thermoelectric will maintain efficient interconversion between heat energy and electricity, providing a means for harnessing waste heat. The most difficult aspect concerning this theme of research maximizes the figure of merit, defined as zT = S2σT/k, where S2 is the Seebeck coefficient, σ the electrical conductivity, T the absolute temperature, and k the thermal conductivity.[8] A majority of TE materials have zT values around 1,9,10 but an extreme case of 40011 has been reported. According to the zT expression, lowering the thermal conductivity would improve the TE efficiency, but the intertwining relationship between thermal and electrical conductivities proves challenging

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