Atomic-level quantum well degradation of GaN-based laser diodes investigated by atom probe tomography

Abstract

Gallium nitride (GaN)- based lasers are extensively employed in display, lighting, and communication applications due to their visible laser emission. Despite notable advancements in their performance and reliability, sustained device functionality over extended periods remains a challenge. Among the diverse mechanisms contributing to degradation, the deterioration of quantum wells poses a persistent obstacle. In this study, we investigated the atomic-level degradation of quantum wells within GaN-based laser diodes utilizing atom probe microscopy. Our analysis revealed a substantial increase in indium fluctuation, accompanied by the formation of indium protrusions at the quantum well interfaces, which provides a credible explanation for the observed increase in FWHM (full width at half maximum) of the spontaneous spectra of lasers following prolonged operation. Additionally, magnesium analysis yielded no evidence of diffusion into the quantum well region. Combined with prior studies, we attribute the degradation of quantum wells primarily to the formation of indium-related non-radiative recombination centers.