Abstract
Atomic layer epitaxy (ALE) processes of ZnSe on GaAs(0 0 1) have been studied by using reflection high-energy electron diffraction and total-reflection-angle X-ray spectroscopy in real time. We have obtained direct evidence that the growing film of ZnSe(0 0 1) changes its surface chemical composition during ALE growth, which corresponds to the alternate formation of the Se-stabilized (2×1) and Zn-stabilized c(2×2) reconstructions. The growth rate of ZnSe has been estimated to be about 0.5 BL per ALE cycle, which can be consistent with the previously proposed structure models for these reconstructed surfaces.
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