Abstract
Carrier gas effects on the atomic layer epitaxial (ALE) conditions and the electrical quality of GaAs are investigated. ALE is achieved over a relatively wide temperature range of 490 to 520°C using nitrogen carrier gas. For hydrogen carrier gas, the corresponding temperature range for ALE growth is only from 490 to 500°C. Gas analysis of TMG reveals that this is due to the suppression of TMG decomposition in nitrogen. The use of nitrogen reduces carbon incorporation in the epilayers by about one order of magnitude (compared to hydrogen) by promoting the arsine decomposition. The stoichiometry of the ALE layer related to deep defects is clarified and a possible way to reduce them is proposed.
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