Abstract
Atomic layer epitaxy (ALE) is a relatively new growth technology for depositing compound semiconductors one monolayer at a time. By employing a new regime of metalorganic chemical vapor deposition (MOCVD) growth, in which saturated surface reactions control the growth, it is possible to alternately deposit monolayers of column III and column V elements so that only one monolayer of the III–V compound semiconductor is formed in every cycle of the deposition. The use of metalorganic precursors for ALE is of considerable importance since it allows the hybridization of ALE with the existing MOCVD technique. Several benefits can be realized by integrating the two technologies. Layers of critical thickness and uniformity requirements can be grown by ALE, while thicker epitaxial layers can be grown by MOCVD. Additional advantages are the “digital growth” nature of ALE which affords a high degree of thickness reproducibility, and the selective area growth potential of laser-assisted ALE (LALE). In this paper, ALE and LALE of GaAs is reviewed with an emphasis on the utilization of metalorganic precursors.
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